Influence of different process parameters on physical properties of fluorine dopes indium oxide thin films
Identifieur interne : 000180 ( Main/Exploration ); précédent : 000179; suivant : 000181Influence of different process parameters on physical properties of fluorine dopes indium oxide thin films
Auteurs : RBID : ISTEX:10853_1994_Article_BF00445982.pdfAbstract
Fluorine-doped indium oxide films were prepared by the spray pyrolysis technique. The physical properties of these films were investigated with respect to various process parameters, namely variation of dopant concentration (in the solution), deposition temperature (Ts), carrier gas (air) flow rate and the thickness of the film. The best films had a Hall mobility of the order of 28 cm2V−1 s−1 and a carrier density of 2.7 × 1020 cm−3. These films were deposited at Ts=425 °C at an air flow rate of 71 min−1 for an atomic ratio of fluorine to indium of 72%. The electrical resistivity of these films was of the order of 10−4 Ω cm and the average transmission in the visible range was found to be 80–90%. The films were polycrystalline, n-type semiconductors with [400] as a preferred orientation. The preferred orientation changes from [400] to [222] depending upon the process parameters.
DOI: 10.1007/BF00445982
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Takwale</name><affiliation wicri:level="1"><mods:affiliation>School of Energy Studies, Department of Physics, University of Poona, 411 007, Pune, India</mods:affiliation><country xml:lang="fr">Inde</country><wicri:regionArea>School of Energy Studies, Department of Physics, University of Poona, 411 007, Pune</wicri:regionArea><wicri:noRegion>Pune</wicri:noRegion></affiliation></author><author><name>B. R. Marathe</name><affiliation wicri:level="1"><mods:affiliation>School of Energy Studies, Department of Physics, University of Poona, 411 007, Pune, India</mods:affiliation><country xml:lang="fr">Inde</country><wicri:regionArea>School of Energy Studies, Department of Physics, University of Poona, 411 007, Pune</wicri:regionArea><wicri:noRegion>Pune</wicri:noRegion></affiliation></author><author><name>V. G. Bhide</name><affiliation wicri:level="1"><mods:affiliation>School of Energy Studies, Department of Physics, University of Poona, 411 007, Pune, India</mods:affiliation><country xml:lang="fr">Inde</country><wicri:regionArea>School of Energy Studies, Department of Physics, University of Poona, 411 007, Pune</wicri:regionArea><wicri:noRegion>Pune</wicri:noRegion></affiliation></author></titleStmt><publicationStmt><idno type="RBID">ISTEX:10853_1994_Article_BF00445982.pdf</idno><date when="1994">1994</date><idno type="doi">10.1007/BF00445982</idno><idno type="wicri:Area/Main/Corpus">000347</idno><idno type="wicri:Area/Main/Curation">000347</idno><idno type="wicri:Area/Main/Exploration">000180</idno></publicationStmt></fileDesc><profileDesc><textClass></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="eng">Fluorine-doped indium oxide films were prepared by the spray pyrolysis technique. The physical properties of these films were investigated with respect to various process parameters, namely variation of dopant concentration (in the solution), deposition temperature (Ts), carrier gas (air) flow rate and the thickness of the film. The best films had a Hall mobility of the order of 28 cm2V−1 s−1 and a carrier density of 2.7 × 1020 cm−3. These films were deposited at Ts=425 °C at an air flow rate of 71 min−1 for an atomic ratio of fluorine to indium of 72%. The electrical resistivity of these films was of the order of 10−4 Ω cm and the average transmission in the visible range was found to be 80–90%. The films were polycrystalline, n-type semiconductors with [400] as a preferred orientation. The preferred orientation changes from [400] to [222] depending upon the process parameters.</div></front></TEI><mods xsi:schemaLocation="http://www.loc.gov/mods/v3 file:///applis/istex/home/loadistex/home/etc/xsd/mods.xsd" version="3.4" istexId="3adb1d6c194447fc68f1a83a7631c9de5a4c2297"><titleInfo lang="eng"><title>Influence of different process parameters on physical properties of fluorine dopes indium oxide thin films</title></titleInfo><name type="personal"><namePart type="given">S.</namePart><namePart type="family">Mirzapour</namePart><role><roleTerm type="text">author</roleTerm></role><affiliation>School of Energy Studies, Department of Physics, University of Poona, 411 007, Pune, India</affiliation></name><name type="personal"><namePart type="given">S. M.</namePart><namePart type="family">Rozati</namePart><role><roleTerm type="text">author</roleTerm></role><affiliation>School of Energy Studies, Department of Physics, University of Poona, 411 007, Pune, India</affiliation></name><name type="personal"><namePart type="given">M. G.</namePart><namePart type="family">Takwale</namePart><role><roleTerm type="text">author</roleTerm></role><affiliation>School of Energy Studies, Department of Physics, University of Poona, 411 007, Pune, India</affiliation></name><name type="personal"><namePart type="given">B. R.</namePart><namePart type="family">Marathe</namePart><role><roleTerm type="text">author</roleTerm></role><affiliation>School of Energy Studies, Department of Physics, University of Poona, 411 007, Pune, India</affiliation></name><name type="personal"><namePart type="given">V. G.</namePart><namePart type="family">Bhide</namePart><role><roleTerm type="text">author</roleTerm></role><affiliation>School of Energy Studies, Department of Physics, University of Poona, 411 007, Pune, India</affiliation></name><typeOfResource>text</typeOfResource><genre>Papers</genre><genre>Original Paper</genre><originInfo><publisher>Kluwer Academic Publishers, Dordrecht</publisher><dateCreated encoding="w3cdtf">1992-08-24</dateCreated><dateCaptured encoding="w3cdtf">1993-08-09</dateCaptured><dateValid encoding="w3cdtf">2004-09-27</dateValid><copyrightDate encoding="w3cdtf">1994</copyrightDate></originInfo><language><languageTerm type="code" authority="iso639-2b">eng</languageTerm></language><physicalDescription><internetMediaType>text/html</internetMediaType></physicalDescription><abstract lang="eng">Fluorine-doped indium oxide films were prepared by the spray pyrolysis technique. The physical properties of these films were investigated with respect to various process parameters, namely variation of dopant concentration (in the solution), deposition temperature (Ts), carrier gas (air) flow rate and the thickness of the film. The best films had a Hall mobility of the order of 28 cm2V−1 s−1 and a carrier density of 2.7 × 1020 cm−3. These films were deposited at Ts=425 °C at an air flow rate of 71 min−1 for an atomic ratio of fluorine to indium of 72%. The electrical resistivity of these films was of the order of 10−4 Ω cm and the average transmission in the visible range was found to be 80–90%. The films were polycrystalline, n-type semiconductors with [400] as a preferred orientation. The preferred orientation changes from [400] to [222] depending upon the process parameters.</abstract><relatedItem type="series"><titleInfo type="abbreviated"><title>Journal of Materials Science</title></titleInfo><titleInfo><title>Journal of Materials Science</title><partNumber>Year: 1994</partNumber><partNumber>Volume: 29</partNumber><partNumber>Number: 3</partNumber></titleInfo><genre>Archive Journal</genre><originInfo><dateIssued encoding="w3cdtf">1994-01-01</dateIssued><copyrightDate encoding="w3cdtf">1994</copyrightDate></originInfo><subject usage="primary"><topic>Chemistry</topic><topic>Polymer Sciences</topic><topic>Industrial Chemistry/Chemical Engineering</topic><topic>Characterization and Evaluation Materials</topic><topic>Mechanics</topic></subject><identifier type="issn">0022-2461</identifier><identifier type="issn">Electronic: 1573-4803</identifier><identifier type="matrixNumber">10853</identifier><identifier type="local">IssueArticleCount: 35</identifier><recordInfo><recordOrigin>Kluwer Academic Publishers, 1994</recordOrigin></recordInfo></relatedItem><identifier type="doi">10.1007/BF00445982</identifier><identifier type="matrixNumber">Art15</identifier><identifier type="local">BF00445982</identifier><accessCondition type="use and reproduction">MetadataGrant: OpenAccess</accessCondition><accessCondition type="use and reproduction">AbstractGrant: OpenAccess</accessCondition><accessCondition type="restriction on access">BodyPDFGrant: Restricted</accessCondition><accessCondition type="restriction on access">BodyHTMLGrant: Restricted</accessCondition><accessCondition type="restriction on access">BibliographyGrant: Restricted</accessCondition><accessCondition type="restriction on access">ESMGrant: Restricted</accessCondition><part><extent unit="pages"><start>700</start><end>707</end></extent></part><recordInfo><recordOrigin>Chapman & Hall, 1994</recordOrigin><recordIdentifier>10853_1994_Article_BF00445982.pdf</recordIdentifier></recordInfo></mods></record>Pour manipuler ce document sous Unix (Dilib)
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